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AUIRF7319QTR

Part No AUIRF7319QTR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A, 4.9A
Maximum Rds On at Id,Vgs 29 mOhm @ 5.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1020726-AUIRF7319QTR
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian AUIRF7319QTR CAD Model

Description

The Infineon Technologies AUIRF7319QTR is an N and P-channel FET with logic level gate feature, designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Channel Type: N and P-channel FET
  • Logic Level Gate: Yes
  • Package: 8-SO
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.5A, 4.9A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 33nC @ 10V
  • Maximum Input Capacitance: 650pF @ 25V
  • Maximum Rds On: 29 mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,894 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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