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Same model may have multiple batches, images only for reference.
AUIRF7732S2TR Real Image
Same model may have multiple batches, images only for reference.

AUIRF7732S2TR

Part No AUIRF7732S2TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 14A DIRECTFET
Datasheet
AUIRF7732S2TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 41W (Tc)
Maximum Rds On at Id,Vgs 6.95 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SC
Dimension DirectFET Isometric SC
Win Source Part Number 1020730-AUIRF7732S2TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRF7732S2TR CAD Model

Description

The Infineon Technologies 464623 is a N-Channel MOSFET with a DirectFET SC package.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 14A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 50μA
  • Maximum Gate Charge: 45nC @ 10V
  • Maximum Rds On @ Id,Vgs: 6.95 mOhm @ 33A, 10V
  • Applications: Discrete Semiconductor Products
  • Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
  • Temperature Range - Operating: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2463 $56.0835
100+ $1.0227 $102.2700
155+ $0.9907 $153.5585
210+ $0.9587 $201.3270
270+ $0.9268 $250.2360
365+ $0.8309 $303.2785
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Availability: 4,800 pieces
MOQ: 45 pcs
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