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AUIRFR2407TRL

Part No AUIRFR2407TRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Rds On (Max) @ Id, Vgs 26mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number AUIRFR2407
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567139-AUIRFR2407TRL
Ultra Librarian 3D Model Ultra Librarian AUIRFR2407TRL CAD Model

Description

The AUIRFR2407TRL is a N-Channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage (Vdss): 75 V
  • Continuous Drain Current (Id): 42A @ 25°C
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250μA
  • Power Dissipation: 110W (Tc)
  • Mounting Type: Surface Mount
  • Package: TO-252-3, DPak
  • Gate Charge (Qg): 110 nC @ 10V
  • Input Capacitance (Ciss): 2400 pF @ 25V
  • Operating Temperature: -55°C to 175°C (TJ)
  • ECCN: EAR99
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9500 $58.5000
65+ $1.6000 $104.0000
100+ $1.5500 $155.0000
135+ $1.5000 $202.5000
175+ $1.4500 $253.7500
235+ $1.3000 $305.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,820 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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