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Same model may have multiple batches, images only for reference.
AUIRFS4010-7P Real Image
Same model may have multiple batches, images only for reference.

AUIRFS4010-7P

Part No AUIRFS4010-7P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 190A D2PAK-7P
Datasheet
AUIRFS4010-7P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 9830pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 380W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 110A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 1020774-AUIRFS4010-7P
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian AUIRFS4010-7P CAD Model

Description

The AUIRFS4010-7P is a MOSFET transistor that is designed for use in discrete semiconductor products.

  • Channel Type: N-channel
  • Maximum Power Dissipation: 380W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 190A (Tc) @ 25°C
  • Maximum Rds On @ Id,Vgs: 4 mOhm @ 110A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 230nC @ 10V
  • Maximum Input Capacitance: 9830pF @ 50V
  • Maximum Gate-Source Voltage: ±20V
  • Package: D2PAK (7-Lead)
  • Dimension: TO-263-7, D2Pak (6 Leads + Tab)
  • Quantity: 50 per package

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28+ $3.5804 $100.2512
44+ $3.4686 $152.6184
60+ $3.3567 $201.4020
78+ $3.2448 $253.0944
104+ $2.9091 $302.5464
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