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Same model may have multiple batches, images only for reference.
AUIRFZ44N Real Image
Same model may have multiple batches, images only for reference.

AUIRFZ44N

Part No AUIRFZ44N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 31A TO-220AB
Datasheet
AUIRFZ44N Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1470pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 17.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1020786-AUIRFZ44N
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian AUIRFZ44N CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 49A (Tc).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 49A (Tc)
  • Maximum Power Dissipation: 94W (Tc)
  • Maximum Rds On: 17.5 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Input Capacitance: 1470pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: TO-220AB
  • Mounting: Through-hole

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Quantity Unit Price Ext. Price
40+ $1.6008 $64.0320
90+ $1.3136 $118.2240
140+ $1.2725 $178.1500
190+ $1.2315 $233.9850
245+ $1.1905 $291.6725
325+ $1.0672 $346.8400
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