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Same model may have multiple batches, images only for reference.
AUIRL3705ZSTRL Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRL3705ZSTRL

Part No AUIRL3705ZSTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
AUIRL3705ZSTRL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 60nC @ 5V
Max Input Capacitance 2880pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 52A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1020803-AUIRL3705ZSTRL
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics, Automotive
Ultra Librarian 3D Model Ultra Librarian AUIRL3705ZSTRL CAD Model

Description

The Infineon Technologies MOSFET with Win Source Part Number 1020803-AUIRL3705ZSTRL is a high-power N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 130W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 60nC @ 5V
  • Maximum Input Capacitance: 2880pF @ 25V
  • Maximum Rds On @ Id,Vgs: 8 mOhm @ 52A, 10V
  • Package: D2PAK
  • Mounting Type: SMD (SMT)
  • Applications: Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics, and Automotive

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