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Same model may have multiple batches, images only for reference.
AUIRLR2905TRL Real Image
Same model may have multiple batches, images only for reference.

AUIRLR2905TRL

Part No AUIRLR2905TRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
AUIRLR2905TRL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 48nC @ 5V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020811-AUIRLR2905TRL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRLR2905TRL CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel transistor.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 42A
  • Gate-Source Threshold Voltage @ 250μA: 2V
  • Maximum Gate Charge @ 5V: 48nC
  • Maximum Rds On @ Id,Vgs: 27 mOhm @ 25A, 10V
  • Power Dissipation (Tc): 110W
  • Temperature Range (TJ): -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.7316 $61.8528
19+ $6.3444 $120.5436
29+ $6.1458 $178.2282
39+ $5.9483 $231.9837
51+ $5.7496 $293.2296
68+ $5.1548 $350.5264
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Availability: 29,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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