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Same model may have multiple batches, images only for reference.
AUIRLR3705Z Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRLR3705Z

Part No AUIRLR3705Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
AUIRLR3705Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 66nC @ 5V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020816-AUIRLR3705Z
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian AUIRLR3705Z CAD Model

Description

The Infineon Technologies AUIRLR3705Z is an N-channel MOSFET transistor suitable for use in discrete semiconductor products.

  • Power Dissipation (max): 130W (Tc)
  • Maximum Rds On @ Id,Vgs: 8 mOhm @ 42A, 10V
  • Ideal for: use in applications where high power is required.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7152 $60.0320
85+ $1.4079 $119.6715
130+ $1.3641 $177.3330
175+ $1.3202 $231.0350
230+ $1.2763 $293.5490
305+ $1.1435 $348.7675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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