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AUIRLU3114Z

Part No AUIRLU3114Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET NCH 40V 130A IPAK / Trans MOSFET N-CH Si 40V 130A Automotive 3-Pin(3+Tab) IPAK Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, HEXFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs 56nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 3810pF @ 25V
Vgs (Maximum) ±16V
Power Dissipation (Maximum) 140W (Tc)
Rds On (Maximum) @ Id, Vgs 4.9 mOhm @ 42A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package IPAK (TO-251)
Package TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 777122-AUIRLU3114Z
Popularity Medium
Supply and Demand Status Limited
Family Name AUIRLU3114Z
Introduction Date June 22, 2011
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian AUIRLU3114Z CAD Model

Description

The Infineon Technologies AUIRLU3114Z is a MOSFET transistor that is a part of the Automotive, AEC-Q101, HEXFET series.

  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Continuous Drain Current: 130A (Tc)
  • Power Dissipation: 140W (Tc)
  • Gate Charge (Qg): 56nC @ 4.5V
  • Input Capacitance (Ciss): 3810pF @ 25V
  • Alternatives: 2SK3716, 2SK3813, 2SK3813-A, 2SK3813-AZ
  • Introduction Date: June 22, 2011
  • Manufacturing Location: Mexico
  • Estimated EOL Date: 2027
  • Compliance: Halogen-Free
  • Popularity: Medium
  • Status: Limited Supply and Demand

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