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Same model may have multiple batches, images only for reference.
BC817-40E6433 Infineon Technologies
Same model may have multiple batches, images only for reference.

BC817-40E6433

Part No BC817-40E6433
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description BIPOLAR GEN PURPOSE TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V
Power - Max 500 mW
Frequency - Transition 170MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
Base Product Number BC817
Standard Package 7,360 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1048394-BC817-40E6433
Ultra Librarian 3D Model Ultra Librarian BC817-40E6433 CAD Model

Description

The BC817-40E6433 is an NPN bipolar transistor designed for single bipolar transistor applications.

  • Series: Automotive, AEC-Q101
  • Maximum Power: 500mW
  • Maximum Collector-Emitter Breakdown Voltage: 45V
  • Maximum Collector Current (Ic): 500mA
  • Vce Saturation: 700mV @ 50mA, 500mA
  • DC Current Gain (hFE): 250 @ 100mA, 1V
  • Operating Temperature: Up to 150°C
  • Mounting: Surface Mountable
  • Package: TO-236-3, SC-59, SOT-23-3
  • Manufacturer: Infineon Technologies
  • Component Status: Active and reliable

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