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Same model may have multiple batches, images only for reference.
BCW60FNE6393HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BCW60FNE6393HTSA1

Part No BCW60FNE6393HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANSISTOR AF SOT23
Datasheet
BCW60FNE6393HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 550mV @ 1.25mA, 50mA
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 380 @ 2mA, 5V
Maximum Power Dissipation 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 1022774-BCW60FNE6393HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCW60FNE6393HTSA1 CAD Model

Description

The Infineon Technologies BCW60FNE6393HTSA1 is an NPN transistor with a frequency transition of 250MHz.

  • Frequency Transition: 250MHz
  • Package: SOT-23-3
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 32V
  • Typical Gain: 380 @ 2mA, 5V
  • Maximum Power Dissipation: 330mW
  • Supply and Demand: balanced

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