The BF886 is a depletion mode (normally-on) N-Channel J-FET from Infineon Technologies. It's designed for RF and general-purpose amplifier applications requiring high gain, low noise, and excellent linearity.

Applications

• RF Amplifiers
• Mixers
• Oscillators
• VHF/UHF Front-End Amplifiers
• High Impedance Sensors

Features

• High Gain: Provides substantial signal amplification.
• Low Noise Figure: Ensures minimal signal degradation.
• High Input Impedance: Reduces loading effects on source signals.
• Depletion Mode Operation: Requires no gate bias for conduction.
• Small Signal Amplifier

Benefits

• Improved Signal Sensitivity: Allows for detection of weak signals.
• Enhanced Signal Integrity: Minimizes noise and distortion.
• Simplified Circuit Design: Requires fewer external components.
• Stable Performance: Ensures reliable operation over a wide range of conditions.

Additional Details

The BF886's high gain and low noise figure make it an excellent choice for sensitive receiver front-ends. Its depletion mode operation simplifies biasing and reduces the number of external components needed. The device's high input impedance minimizes loading effects, ensuring accurate signal transfer. The BF886 is suitable for both narrow-band and wide-band amplifier designs. Careful selection of external components is essential to optimize the performance of the BF886 in specific applications. The H6327 designation indicates specific tape and reel packaging for automated assembly processes.

Maximum Drain-Source Voltage: 25V

Gate-Source Voltage: -25V

Drain Current (IDSS): 6-18 mA (at VDS = 15V, VGS = 0V)

Noise Figure: 1.5dB (typical at 200 MHz)

Package: SOT-23