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BFR183W H6327

Part No BFR183W H6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS RF NPN 12V 65MA SOT323
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.4dB @ 900MHz to 1.8GHz
Gain 18.5dB
Maximum Power Dissipation 450mW
Typical Gain (hFE) (Min) 70 @ 15mA, 8V
Maximum Current Collector 65mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 201168-BFR183W H6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFR183W H6327 CAD Model

Description

BFR183W H6327 from Infineon Technologies is an RF BJT transistor intended for designs that need dependable high-frequency signal handling in compact communication and signal-conditioning circuits. Components in this category are commonly evaluated for RF amplification, oscillator stages, driver paths, and other small-signal radio-frequency functions across consumer, industrial, and telecom-related electronics. For engineers, the value of this part lies in Infineon’s established semiconductor portfolio and its relevance to RF designs where consistent sourcing, documentation review, and compliance screening are important before release to production. The current lifecycle status for BFR183W H6327 is information not available, so teams should confirm whether the device is active, restricted, or approaching end-of-life directly with the manufacturer or authorized distribution channels. RoHS compliance information is also not available in the provided data. Before qualification, engineers and buyers should verify the latest datasheet, material declaration, and environmental compliance status through official Infineon documentation.

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