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BG3123R H6327

Part No BG3123R H6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH DUAL 8V 25MA SOT363
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 N-Channel (Dual)
Frequency 800MHz
Gain 25dB
Voltage - Test 5V
Current Rating 25mA, 20mA
Noise Figure 1.8dB
Current - Test 14mA
Voltage Rating 8V
Case / Package PG-SOT363-6
Win Source Part Number 201191-BG3123R H6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BG3123R H6327 CAD Model

Description

Description

The BG3123R H6327 is engineered to deliver exceptional performance across a wide range of high-frequency applications. It ensures robust operation and is tailored for advanced technological solutions.

Applications

  • RF communication devices
  • Telecommunication infrastructure
  • Signal processing equipment

Features and Benefits

  • Enhanced signal integrity
  • High reliability under various conditions
  • Versatile deployment options

The BG3123R H6327 is the ideal component for engineers seeking to optimize their high-frequency electronic designs.

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Shipping Information

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