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BGA777N7

Part No BGA777N7
Manufacturer Infineon Technologies
Catalog RF Amplifiers
Description Single-Band UMTS LNA (2300 - 2700 MHz)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1153422-BGA777N7
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BGA777N7 CAD Model

Description

The BGA777N7 is a P-channel enhancement-mode MOSFET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 2.1A
  • Popularity: Medium
  • Win Source Part Number: 1153422-BGA777N7

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.4842 $58.3578
22+ $5.3211 $117.0642
34+ $5.1548 $175.2632
47+ $4.9884 $234.4548
60+ $4.8221 $289.3260
81+ $4.3232 $350.1792
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,200 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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