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Same model may have multiple batches, images only for reference.
BSC028N06NSSCATMA1 Real Image
Same model may have multiple batches, images only for reference.

BSC028N06NSSCATMA1

Part No BSC028N06NSSCATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TDSON / N-Channel 60 V 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-7
Datasheet
BSC028N06NSSCATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3375 pF @ 30 V
Power Dissipation (Max) 2.5W (Ta) , 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN
Base Product Number BSC028
Standard Package 4,000
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351018-BSC028N06NSSCATMA1
Ultra Librarian 3D Model Ultra Librarian BSC028N06NSSCATMA1 CAD Model

Description

The 1351018-BSC028N06NSSCATMA1 is an N-channel MOSFET transistor from the OptiMOS™ series by Infineon Technologies.

  • Mounting Type: Surface Mount
  • Package: 8-PowerTDFN
  • Drain-to-Source Voltage: 60 V
  • Maximum Power Dissipation: 2.5 W (Ta) and 83 W (Tc)
  • Maximum Gate-Source Voltage: ±20 V
  • Operating Temperature: -55°C to 150°C
  • Maximum Continuous Drain Current: 100 A (Tc)
  • Maximum On-Resistance: 2.8 mOhm @ 50 A, 10 V
  • Gate Charge: 49 nC @ 10 V
  • Input Capacitance: 3375 pF @ 30 V

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