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BSC030P03NS3 G

Part No BSC030P03NS3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 30V 25.4A Automotive 8-Pin TDSON EP T/R / MOSFET P-CH 30V 100A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25.4A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.1V @ 345μA
Max Gate Charge 186nC @ 10V
Max Input Capacitance 14000pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024327-BSC030P03NS3 G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name BSC030P03NS3
Introduction Date March 17, 2009
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian BSC030P03NS3 G CAD Model

Description

The Infineon BSC030P03NS3 G is a P-channel MOSFET.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 25.4A (Ta), 100A (Tc) @ 25°C
  • Package: PG-TDSON-8
  • Power Dissipation: 2.5W (Ta), 125W (Tc)
  • Gate-Source Threshold Voltage: 3.1V @ 345μA
  • Maximum Gate Charge: 186nC @ 10V
  • Maximum Rds On @ Id,Vgs: 3 mOhm @ 50A, 10V
  • Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8346 $50.0760
130+ $0.7808 $101.5040
200+ $0.7539 $150.7800
290+ $0.7000 $203.0000
375+ $0.6731 $252.4125
465+ $0.6462 $300.4830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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