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BSC059N03S G

Part No BSC059N03S G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 73A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17.5A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 35μA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 2670pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 17.5W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 125010-BSC059N03S G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC059N03S G CAD Model

Description

Features and Benefits of BSC059N03S G

  • Low RDS(on) for improved efficiency
  • High-speed switching capabilities
  • Enhanced thermal resistance
  • Robust design for reliability

Applications and Projects

  • Switching regulators
  • DC-DC converters
  • Power management systems
  • Consumer electronics

The BSC059N03S G is a highly reliable N-channel MOSFET, ideal for applications requiring efficient power management. Its low on-resistance and enhanced thermal capabilities make it suitable for demanding electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3927 $58.9050
360+ $0.3222 $115.9920
560+ $0.3119 $174.6640
770+ $0.3015 $232.1550
990+ $0.2922 $289.2780
1,325+ $0.2622 $347.4150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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