The Infineon Technologies N-Channel MOSFET is a high-performance electronic component designed for use in various electronic devices.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current @ 25°C: 80A
• Maximum Power Dissipation: 2.5W (Ta), 83W (Tc)
• Maximum Rds On: 7 mOhm @ 40A, 10V
• Gate-Source Threshold Voltage: 3.8V @ 50μA
• Maximum Gate Charge: 38nC @ 10V
• Maximum Input Capacitance: 2700pF @ 50V
• Suitable for: use in applications such as power management and industrial control systems
• Package: PG-TDSON-8
• Mounting: reel