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BSC072N03LD G

Part No BSC072N03LD G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 11.5A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.5A
Maximum Rds On at Id,Vgs 7.2 mOhm @ 20A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 3500pF @ 15V
Maximum Power Dissipation 57W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Win Source Part Number 079689-BSC072N03LD G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC072N03LD G CAD Model

Description

Overview of BSC072N03LD G

The BSC072N03LD G is a field-effect transistor designed for high efficiency and reliability, suitable for a variety of power management applications.

Features and Benefits

  • Low gate charge for enhanced switching performance
  • Improved avalanche capability for rugged applications
  • Excellent thermal management properties

Applications

  • Battery management systems
  • LED lighting drivers
  • High-speed switching circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8857 $53.1420
125+ $0.8286 $103.5750
190+ $0.8000 $152.0000
270+ $0.7429 $200.5830
350+ $0.7143 $250.0050
440+ $0.6858 $301.7520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,250 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipping Information

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