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Same model may have multiple batches, images only for reference.
BSC076N06NS3GATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSC076N06NS3GATMA1

Part No BSC076N06NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 50A TDSON-8
Datasheet
BSC076N06NS3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 35μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 4000pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 7.6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 106218-BSC076N06NS3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC076N06NS3GATMA1 CAD Model

Description

Overview of BSC076N06NS3GATMA1

The BSC076N06NS3GATMA1 is a versatile MOSFET known for its outstanding thermal properties and efficiency, tailored for high-current applications.

Features and Benefits

  • Low thermal resistance for enhanced heating capabilities
  • Durability and long lifespan
  • Highly efficient with minimal energy loss

Applications

  • Motor drives
  • Uninterruptible power supplies (UPS)
  • Consumer electronics

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7951 $51.6815
155+ $0.6524 $101.1220
240+ $0.6320 $151.6800
330+ $0.6116 $201.8280
425+ $0.5912 $251.2600
570+ $0.5301 $302.1570
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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