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Same model may have multiple batches, images only for reference.
BSC084P03NS3EGATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSC084P03NS3EGATMA1

Part No BSC084P03NS3EGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 14.9A TDSON-8
Datasheet
BSC084P03NS3EGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14.9A (Ta), 78.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 110μA
Max Gate Charge 57.7nC @ 10V
Max Input Capacitance 4240pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024342-BSC084P03NS3EGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC084P03NS3EGATMA1 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance P-Channel power MOSFET designed for use in a variety of applications.

  • Channel Type: P-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14.9A (Ta), 78.6A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Rds On @ Id,Vgs: 8.4 mOhm @ 50A, 10V
  • Package: PG-TDSON-8
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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