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BSC0902NSI

Part No BSC0902NSI
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R / MOSFET N-CH 30V 100A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 10mA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 1500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024343-BSC0902NSI
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name BSC0902NSI
Introduction Date June 10, 2011
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian BSC0902NSI CAD Model

Description

The Infineon Technologies BSC0902NSI is an N-Channel MOSFET with a drain-source breakdown voltage of 30V.

  • Case/Package: PG-TDSON-8
  • Maximum Rds on @ Id, Vgs: 2.8 mOhm @ 30A, 10V
  • Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
  • Continuous Drain Current @ 25°C: 23A (Ta), 100A (Tc)
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Input Capacitance: 1500pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4692 $51.6120
260+ $0.3850 $100.1000
405+ $0.3730 $151.0650
555+ $0.3610 $200.3550
720+ $0.3489 $251.2080
960+ $0.3128 $300.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,500 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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