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BSC0906NSATMA1

Part No BSC0906NSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 18A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 18A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 870pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 128024-BSC0906NSATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC0906NSATMA1 CAD Model

Description

Description

The BSC0906NSATMA1 is a reliable N-channel MOSFET known for its superior power efficiency and compact footprint. Its excellent drive capability makes it ideal for high-density electronic applications.

Features and Benefits

  • Superior power efficiency
  • Compact footprint for space-saving designs
  • Excellent drive capability
  • High energy efficiency

Applications

  • Power supplies
  • LED drivers
  • Portable electronics
  • Embedded systems

The BSC0906NSATMA1 offers unmatched efficiency in compact designs, catering to the needs of advanced electronics today.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3693 $59.0880
385+ $0.3031 $116.6935
595+ $0.2936 $174.6920
815+ $0.2841 $231.5415
1,055+ $0.2747 $289.8085
1,410+ $0.2462 $347.1420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 84,686 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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