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BSC098N10NS5ATMA1

Part No BSC098N10NS5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 60A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.8V @ 36μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 2100pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 9.8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024348-BSC098N10NS5ATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSC098N10NS5ATMA1 CAD Model

Description

The Infineon Technologies 1024348-BSC098N10NS5ATMA1 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Part Number: 1024348-BSC098N10NS5ATMA1
  • Channel Type: N-Channel
  • Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 60A (Tc)
  • Gate-Source Threshold Voltage: 3.8V @ 36μA
  • Gate Charge (Max): 28nC @ 10V
  • Input Capacitance (Max): 2100pF @ 50V
  • Rds On (Max) @ Id,Vgs: 9.8 mOhm @ 30A, 10V
  • Package: PG-TDSON-8
  • Mounting Type: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7750 $50.3750
140+ $0.7250 $101.5000
215+ $0.7000 $150.5000
310+ $0.6500 $201.5000
400+ $0.6250 $250.0000
500+ $0.6000 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 234,790 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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