The BSC123N08NS3G is a OptiMOS™ power MOSFET from Infineon Technologies. This N-channel MOSFET is designed for high-efficiency power conversion and switching applications. It features a low on-state resistance (Rds(on)) and optimized switching behavior, contributing to reduced power losses and improved system performance.

Applications

        
• Synchronous rectification in switched-mode power supplies (SMPS): Improves efficiency by replacing Schottky diodes with MOSFETs in secondary rectification stages.
        
• DC-DC converters: Used in voltage regulators and other DC-DC conversion circuits in a variety of applications including telecom and server power.
        
• Motor control: Drives and controls DC motors in various applications.
        
• Battery management systems (BMS): Used in protection circuits and switching applications within BMS for lithium-ion batteries.
        
• Load switching applications: General-purpose switching applications where high efficiency is required.
    

Features

        
• Low on-state resistance (Rds(on)): Minimizes conduction losses, maximizing efficiency.
        
• Optimized switching behavior: Reduces switching losses.
        
• Logic level gate drive: Can be driven directly by microcontrollers and logic devices, simplifying gate drive circuitry.
        
• Avalanche rated: Withstands transient voltage spikes, improving robustness.
        
• PG-TDSON-8 package: Small footprint with excellent thermal performance.
    

Benefits

        
• High efficiency: Due to low Rds(on) and optimized switching, high efficiency is achieved.
        
• Reduced heat dissipation: Lower power losses translate to less heat generation, simplifying thermal management.
        
• Simplified design: Logic level gate drive enables easier integration with control circuits.
        
• Improved reliability: Robust due to its avalanche rating.
        
• Compact design: Small PG-TDSON-8 package enables high power density designs.
    

Technical Specifications

        
• Channel Type: N-Channel
        
• Drain-Source Voltage (Vds): 80 V
        
• Continuous Drain Current (Id): 31 A
        
• On-State Resistance (Rds(on)): 12.3 mΩ (at Vgs = 10 V)
        
• Gate Threshold Voltage (Vgs(th)): 2 V to 4 V
        
• Total Gate Charge (Qg): Refer to datasheet
        
• Package: PG-TDSON-8