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Same model may have multiple batches, images only for reference.
BSC196N10NSGATMA1 Real Image1
BSC196N10NSGATMA1 Real Image1 BSC196N10NSGATMA1 Real Image2
Same model may have multiple batches, images only for reference.

BSC196N10NSGATMA1

Part No BSC196N10NSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 45A TDSON-8
Datasheet
BSC196N10NSGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.5A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 42μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 2300pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 78W (Tc)
Maximum Rds On at Id,Vgs 19.6 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 135282-BSC196N10NSGATMA1
Popularity Medium
Supply and Demand Status Limited

Description

The Infineon Technologies 135282-BSC196N10NSGATMA1 is an active N-channel MOSFET with a maximum power dissipation of 78W. It comes in PG-TDSON-8 packaging and has a drain-source breakdown voltage of 100V. The continuous drain current at 25°C is 8.5A (Ta) and 45A (Tc). The maximum gate-source voltage is ±20V, and the maximum Rds On at Id,Vgs is 19.6 mOhm @ 45A, 10V.

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Quantity Unit Price Ext. Price
70+ $0.7169 $50.1830
170+ $0.5883 $100.0110
265+ $0.5699 $151.0235
365+ $0.5515 $201.2975
470+ $0.5331 $250.5570
630+ $0.4780 $301.1400
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