The BSC750N10ND is an N-channel power MOSFET from Infineon Technologies, designed utilizing their OptiMOS™ technology. This technology facilitates superior efficiency and power density, making it suitable for a broad range of applications. The device offers low on-state resistance and optimized switching behavior, contributing to minimized power losses.

Applications

• Synchronous rectification in SMPS (Switched-Mode Power Supplies)
• DC-DC converters
• Power tools
• Battery management systems
• Class D audio amplifiers

Features

• OptiMOS™ power MOSFET technology
• Very low on-state resistance (R<sub>DS(on))
• Logic level driving capability
• Avalanche rated
• 100% avalanche tested
• Pb-free and RoHS compliant

Benefits

• High efficiency due to low conduction and switching losses
• Reduced heat generation, simplifying thermal management
• Direct microcontroller interface capability
• Robustness against voltage transients
• Environmentally friendly

Detailed Specifications

The BSC750N10ND features a drain-source voltage (V<sub>DS) of 100V and a continuous drain current (I<sub>D) of up to 37A at 25°C case temperature. Its on-state resistance (R<sub>DS(on)) is typically 7.5 mΩ at V<sub>GS = 10V. The gate-source threshold voltage (V<sub>GS(th)) is typically between 2V and 4V, ensuring compatibility with logic-level drive signals. The device is packaged in a PG-TDSON-8, which is designed for efficient heat dissipation. The MOSFET is avalanche rated, allowing it to withstand transient voltage spikes without damage. This MOSFET also boasts a fast switching speed, which is vital in high-frequency power conversion applications. Its low gate charge (Q<sub>g) minimizes switching losses. The thermal resistance from junction to case (R<sub>thJC) is low, promoting effective heat transfer. The device's rugged design ensures long-term reliability. Its construction incorporates materials and processes designed for robust performance under diverse operating conditions.

The low on-resistance reduces conduction losses significantly, leading to higher overall system efficiency. The optimized switching behavior minimizes switching losses. These characteristics collectively make the BSC750N10ND an excellent choice for demanding power conversion applications.