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BSC882N03LSGATMA1

Part No BSC882N03LSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TDSON-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 34V
Continuous Drain Current at 25°C 100A
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 3700pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 69W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Win Source Part Number 1010311-BSC882N03LSGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC882N03LSGATMA1 CAD Model

Description

The Infineon Technologies MOSFET, BSC882N03LSGATMA1, is a N-Channel polarity transistor that can handle a maximum power dissipation of 69W.

  • Packaging: Reel - TR
  • Operating Temperature Range: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 34V
  • Continuous Drain Current @ 25°C: 100A
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge @ 10V: 46nC
  • Maximum Input Capacitance @ 15V: 3700pF
  • Maximum Rds On @ Id,Vgs: 4.2 mOhm @ 30A, 10V
  • Supply and Demand Status: Balanced

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