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Same model may have multiple batches, images only for reference.
BSC882N03MSGATMA1 Real Image
Same model may have multiple batches, images only for reference.

BSC882N03MSGATMA1

Part No BSC882N03MSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 34V 22A TDSON-8
Datasheet
BSC882N03MSGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 34V
Continuous Drain Current at 25°C 22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 4300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 101321-BSC882N03MSGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC882N03MSGATMA1 CAD Model

Description

Product Description

The BSC882N03MSGATMA1 is a versatile N-channel MOSFET designed for a wide spectrum of power management applications. Its efficiency and performance make it a reliable choice for advanced electronic systems.

Features and Benefits

  • Low Gate Charge: Reduces drive requirements, improving efficiency.
  • Excellent Switching Characteristics: Ensures high performance in fast-switching scenarios.
  • High-Temp Operation: Capable of maintaining stability at elevated operational temperatures.

Applications

  • Automotive Power Systems
  • Consumer Electronics
  • Uninterruptible Power Supplies (UPS)

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