The Vishay SI3433BDV-T1-GE3 is a MOSFET that is designed for use in a wide range of applications.

• Power Dissipation (Max): 1.1W (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Temperature Range - Operating: -55°C to 150°C (TJ)
• Package: 6-TSOP
• Dimension: SOT-23-6 Thin, TSOT-23-6
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current @ 25°C: 4.3A (Ta)
• Gate-Source Threshold Voltage: 850mV @ 250µA
• Max Gate Charge: 18nC @ 4.5V
• Maximum Rds On @ Id,Vgs: 42 mOhm @ 5.6A, 4.5V
• Supply and Demand Status: Sufficient
• ECCN: EAR99