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BSF050N03LQ3GXUMA1

Part No BSF050N03LQ3GXUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A 2WDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 3000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 20A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MG-WDSON-2, CanPAK M
Dimension 3-WDSON
Win Source Part Number 103348-BSF050N03LQ3GXUMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSF050N03LQ3GXUMA1 CAD Model

Description

Features and Benefits

  • Optimized for low power loss
  • Superior gate charge control
  • Compact and lightweight design
  • High surge current capability

Applications

  • Smart grid technologies
  • Electric vehicle charging stations
  • Advanced computing systems
  • Signal processing equipment

The BSF050N03LQ3GXUMA1 is tailored for demanding power applications, offering superior control and energy efficiency crucial for advanced and emerging technology sectors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2117 $50.8080
580+ $0.1738 $100.8040
895+ $0.1683 $150.6285
1,230+ $0.1629 $200.3670
1,590+ $0.1575 $250.4250
2,125+ $0.1412 $300.0500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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