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BSL202SNL6327

Part No BSL202SNL6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SMALL SIGNAL N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™2
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1147 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSOP6-6-6
Package / Case SOT-23-6 Thin, TSOT-23-6
Standard Package 646 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 730115-BSL202SNL6327
Ultra Librarian 3D Model Ultra Librarian BSL202SNL6327 CAD Model

Description

The BSL202SNL6327 is an N-channel OptiMOS™2 MOSFET transistor from Infineon Technologies.

  • Channel Type: N-channel
  • Package: surface mountable SOT-23-6 Thin or TSOT-23-6
  • Drain-to-Source Voltage: 20V
  • Continuous Drain Current: 7.5A @ 25°C
  • Maximum On-Resistance: 22mOhm @ 7.5A drain current and 4.5V gate-source voltage
  • Threshold Voltage: 1.2V @ 30µA drain current
  • Maximum Power Dissipation: 2W @ 25°C case temperature
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,900 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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