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Same model may have multiple batches, images only for reference.
BSL308CH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSL308CH6327XTSA1

Part No BSL308CH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 2.3A/2A 6TSOP
Datasheet
BSL308CH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel Complementary
FET Feature Logic Level Gate, 4.5V Drive
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.3A, 2A
Maximum Rds On at Id,Vgs 57 mOhm @ 2.3A, 10V
Gate-Source Threshold Voltage 2V @ 11μA
Max Gate Charge 1.5nC @ 10V
Max Input Capacitance 275pF @ 15V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 1024392-BSL308CH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSL308CH6327XTSA1 CAD Model

Description

The Infineon Technologies BSL308CH6327XTSA1 is a discrete semiconductor product in the N and P-Channel Complementary FET technology category.

  • Status: active
  • Supply and Demand Status: sufficient
  • Mounting: SMD (SMT)
  • Package: PG-TSOP6-6
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2.3A, 2A
  • Gate-Source Threshold Voltage: 2V @ 11μA
  • Maximum Gate Charge: 1.5nC @ 10V
  • Maximum Rds On @ Id,Vgs: 57 mOhm @ 2.3A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4315 $51.7800
285+ $0.3541 $100.9185
440+ $0.3430 $150.9200
605+ $0.3320 $200.8600
780+ $0.3209 $250.3020
1,045+ $0.2877 $300.6465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,170 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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