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BSL308PEH6327XTSA1

Part No BSL308PEH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 2A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate, 4.5V Drive
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A
Maximum Rds On at Id,Vgs 80 mOhm @ 2A, 10V
Gate-Source Threshold Voltage 1V @ 11μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 500pF @ 15V
Maximum Power Dissipation 500mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Win Source Part Number 125382-BSL308PEH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL308PEH6327XTSA1 CAD Model

Description

BSL308PEH6327XTSA1

The BSL308PEH6327XTSA1 is engineered to deliver powerful performance in high-stress environments. It is frequently deployed in automotive, aerospace, and high-speed networking applications.

  • Applications: Automotive lighting, high-power switching, RF amplification
  • Features: Heat-resilient, low capacitance, robust pin configuration
  • Benefits: Enhanced durability, minimal interference, optimized thermal management

With outstanding electrical stability, this component supports optimal functionality in mission-critical projects.

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