The Infineon Technologies MOSFET is a P-channel power MOSFET that features a drain-source breakdown voltage of 30V and a continuous drain current of 12A at 25°C.

• Manufacturer: Infineon Technologies
• Type: P-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current @ 25°C: 12A
• Power Dissipation: 1.6W (Ta)
• Package: PG-DSO-8
• Dimension: 8-SOIC (0.154", 3.90mm Width)
• Maximum Rds On @ Id,Vgs: 8 mOhm @ 14.8A, 10V
• Gate-Source Threshold Voltage: 3.1V @ 150μA
• Maximum Gate-Source Voltage: ±25V
• Maximum Gate Charge: 81nC @ 10V
• Input Capacitance: 6750pF @ 15V
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Applications: Power supplies, motor control, and load switches