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BSO200N03S Real Image
Same model may have multiple batches, images only for reference.

BSO200N03S

Part No BSO200N03S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7A 8DSO
Datasheet
BSO200N03S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 10μA
Max Gate Charge 6.5nC @ 5V
Max Input Capacitance 840pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 8.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 132632-BSO200N03S
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSO200N03S CAD Model

Description

BSO200N03S Description

The BSO200N03S is a highly efficient N-channel MOSFET designed for projects requiring minimal power loss and high-speed operation. Its optimal design features low gate charge and low on-resistance, facilitating exceptional performance in demanding environments.

  • Switching power supplies
  • Battery management systems
  • Power optimization projects

Key Features and Benefits

  • Low on-resistance
  • Rapid switching
  • Energy efficiency
  • Compact size for space-constrained designs

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5908 $64.9880
270+ $0.4848 $130.8960
415+ $0.4697 $194.9255
570+ $0.4546 $259.1220
740+ $0.4393 $325.0820
990+ $0.3939 $389.9610
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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