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Same model may have multiple batches, images only for reference.
BSO211P Real Image
Same model may have multiple batches, images only for reference.

BSO211P

Part No BSO211P
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description P-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.7A
Rds On (Max) @ Id, Vgs 67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 23.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 15V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Base Product Number BSO211
Standard Package 944 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 572111-BSO211P
Ultra Librarian 3D Model Ultra Librarian BSO211P CAD Model

Description

The BSO211P is a dual P-channel MOSFET array from Infineon Technologies.

  • Series: OptiMOS™
  • Gate Feature: Logic Level
  • Drain-to-Source Voltage: 20V
  • Continuous Drain Current: 4.7A @ 25°C
  • Rds On: 67mOhm @ 4.7A and 4.5V
  • Gate Threshold Voltage: 1.2V @ 25μA
  • Maximum Power Dissipation: 2W
  • Mounting: Surface Mount
  • Package: 8-SOIC

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365+ $0.3169 $115.6685
565+ $0.3072 $173.5680
780+ $0.2972 $231.8160
1,010+ $0.2873 $290.1730
1,350+ $0.2576 $347.7600
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