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BSO4410

Part No BSO4410
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11.1A 8-SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 42μA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 1280pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 11.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 126123-BSO4410
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSO4410 CAD Model

Description

Product Overview

The BSO4410 is a high-performance N-channel MOSFET known for its superior current handling and reduced on-state resistance, making it a trusted component in demanding applications.

Features and Benefits

  • Low gate drive requirement
  • High-energy efficiency
  • Compact and lightweight
  • Optimized for extended lifetime and reliability

Applications and Projects

  • Telecommunication systems
  • Automotive electronics
  • Power tools
  • Inverters and converters

Additional Details

The BSO4410 is designed to withstand harsh electrical environments making it ideal for both consumer and industrial applications, enhancing the overall system robustness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5907 $59.0700
240+ $0.4848 $116.3520
370+ $0.4695 $173.7150
510+ $0.4544 $231.7440
660+ $0.4393 $289.9380
880+ $0.3939 $346.6320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,090 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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