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BSP171PL6327HTSA1

Part No BSP171PL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 1.9A SOT-223 / Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series SIPMOS
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 460μA
Gate Charge (Qg) (Maximum) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 460pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.8W (Ta)
Rds On (Maximum) @ Id, Vgs 300 mOhm @ 1.9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-SOT223-4
Package TO-261-4, TO-261AA
Win Source Part Number 770426-BSP171PL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Family Name BSP171PL6327HTSA1
Introduction Date July 01, 1997
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BSP171PL6327HTSA1 CAD Model

Description

The BSP171PL6327HTSA1 is a P-channel MOSFET from Infineon Technologies designed for load switching, high-side switching, and other general-purpose applications. This MOSFET is characterized by a low on-resistance and a logic-level gate drive, making it suitable for direct control from microcontrollers and other low-voltage control circuits. Its robust design and efficient performance make it ideal for use in various industrial and consumer applications.

Applications

  • High-side load switching
  • Reverse polarity protection
  • Battery management systems
  • Power distribution
  • General-purpose switching

Features

  • P-channel, enhancement mode
  • Low on-resistance (RDS(on))
  • Logic level gate drive
  • Avalanche rated
  • Pb-free lead finishing; RoHS compliant

Benefits

  • Direct control from logic circuits simplifies design
  • Reduced power loss due to low RDS(on)
  • Enhanced robustness and reliability due to avalanche rating
  • Environmentally friendly due to Pb-free and RoHS compliance
  • Improved system efficiency

Technical Specifications

The BSP171PL6327HTSA1 features a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of -0.7A. It has a typical on-resistance (RDS(on)) of 0.25 Ω at VGS = -4.5V. The gate threshold voltage (VGS(th)) is typically -1V. The device is packaged in a SOT-23 package, offering a small footprint for space-constrained applications. The operating junction temperature range is -55°C to +150°C. The MOSFET is designed for use in circuits where a P-channel device is required for high-side switching or reverse polarity protection. Its low gate charge ensures efficient switching and reduces power consumption in driving circuits. The BSP171PL6327HTSA1’s compact size and robust characteristics make it a versatile choice for a wide range of applications.

In summary, the BSP171PL6327HTSA1 from Infineon Technologies is a versatile P-channel MOSFET designed for high-side switching and general-purpose applications. Its low on-resistance, logic-level gate drive, and compact SOT-23 package make it a reliable and efficient choice for various industrial and consumer electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1954 $59.7700
120+ $0.9806 $117.6720
185+ $0.9506 $175.8610
255+ $0.9194 $234.4470
325+ $0.8894 $289.0550
435+ $0.7970 $346.6950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 145,016 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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