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BSP299E6327

Part No BSP299E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 400MA SOT-223
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 400mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 201412-BSP299E6327
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSP299E6327 CAD Model

Description

Overview

The BSP299E6327 is a versatile N-channel MOSFET transistor optimized for high efficiency in electronic circuits. Its design supports robust performance in a variety of switching applications.

Features and Benefits

  • Fast switching speeds to improve system performance.
  • Low thermal resistance aiding in heat dissipation.
  • Enhanced power handling capacity for demanding applications.

Applications

  • Battery Management Systems
  • Wireless Charging Units
  • Lighting Controllers
  • Power Supply Units

Additional Details

The device is engineered to minimize power loss and ensure long-lasting reliability, crucial for prolonged operational stability in critical applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,552 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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