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BSP299H6327XUSA1

Part No BSP299H6327XUSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 0.4A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 400mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 131083-BSP299H6327XUSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSP299H6327XUSA1 CAD Model

Description

Overview

The BSP299H6327XUSA1 offers an advanced solution for projects requiring efficient switching and power management. As an N-channel MOSFET, it is built for high functionality and durability.

Features and Benefits

  • Excellent switching efficiency to save energy.
  • High noise immunity to maintain signal integrity.
  • Compact and lightweight design for portable applications.

Applications

  • Telecommunication Equipment
  • Solar Inverters
  • Portable Electronics
  • Industrial Automation Systems

Additional Details

This component exhibits exceptional performance under high load conditions, making it ideal for use in dynamic and demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4925 $52.3875
35+ $2.8657 $100.2995
55+ $2.7761 $152.6855
75+ $2.6866 $201.4950
97+ $2.5970 $251.9090
129+ $2.3284 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,230 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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