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Same model may have multiple batches, images only for reference.
BSP317PH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSP317PH6327XTSA1

Part No BSP317PH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 0.43A SOT223
Datasheet
BSP317PH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 370μA
Max Gate Charge 15.1nC @ 10V
Max Input Capacitance 262pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 430mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1024444-BSP317PH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP317PH6327XTSA1 CAD Model

Description

The Infineon Technologies BSP317PH6327XTSA1 is a P-channel MOSFET transistor with a drain-source breakdown voltage of 250V and a maximum continuous drain current of 430mA @ 25°C.

  • Power Dissipation: Up to 1.8W (Ta)
  • Maximum Rds On: 4 Ohm @ 430mA and 10V
  • Gate-Source Threshold Voltage: 2V @ 370μA
  • Maximum Gate Charge: 15.1nC @ 10V
  • Case: PG-SOT223-4
  • Maximum Input Capacitance: 262pF @ 25V
  • Suitable for: Discrete semiconductor products
  • Popularity: Medium
  • Device Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5735 $51.6150
215+ $0.4706 $101.1790
330+ $0.4559 $150.4470
455+ $0.4412 $200.7460
590+ $0.4265 $251.6350
785+ $0.3824 $300.1840
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Availability: 10,000 pieces
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