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BSP318SL6327HTSA1

Part No BSP318SL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.6A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 130966-BSP318SL6327HTSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSP318SL6327HTSA1 CAD Model

Description

Overview

The BSP318SL6327HTSA1 is a versatile N-channel MOSFET known for its reliable performance and energy-efficient operation. It’s crafted to support an array of applications.

Features and Benefits

  • Low gate charge, minimizing unnecessary power consumption.
  • Compact and lightweight design, ideal for space-constrained projects.
  • High-efficiency operational characteristics for sustainable energy management.
  • Robust thermal features cater to high-temperature environments.

Applications

  • Automatic test equipment
  • Robotics and UAVs
  • Signal processing circuits
  • LED lighting systems
  • Energy conversion modules

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8602 $51.6120
145+ $0.7059 $102.3555
220+ $0.6838 $150.4360
305+ $0.6617 $201.8185
395+ $0.6397 $252.6815
525+ $0.5735 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,600 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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