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BSP321P L6327

Part No BSP321P L6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 0.98A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 980mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 380μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 319pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 900 mOhm @ 980mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 201414-BSP321P L6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP321P L6327 CAD Model

Description

BSP321P L6327 - Versatile P-Channel MOSFET

The BSP321P L6327 stands out as a versatile P-Channel MOSFET, ideal for signal switching and load management in various electronic designs.

  • Battery-operated devices
  • Load switching control
  • Low-power applications

Features and Benefits:

  • Enhanced thermal performance sustains longevity
  • Low gate drive power decreases overall device power consumption
  • Simplifies circuit design with a P-Channel configuration
  • Reliable performance across a range of currents and voltages

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