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Same model may have multiple batches, images only for reference.
BSS126 E6327 Real Image
Same model may have multiple batches, images only for reference.

BSS126 E6327

Part No BSS126 E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.021A SOT-23
Datasheet
BSS126 E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Gate-Source Threshold Voltage 1.6V @ 8μA
Max Gate Charge 2.1nC @ 5V
Max Input Capacitance 28pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 500 Ohm @ 16mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024486-BSS126 E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS126 E6327 CAD Model

Description

The BSS126 E6327 is an electronic component manufactured by Infineon Technologies.

  • Description: Depletion Mode N-Channel MOSFET Transistor
  • Maximum Power Dissipation: 36 pct
  • Supply and Demand Status: Balance
  • Drain-Source Breakdown Voltage: 600V

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1300 $50.0500
825+ $0.1217 $100.4025
1,280+ $0.1175 $150.4000
1,835+ $0.1091 $200.1985
2,385+ $0.1049 $250.1865
2,980+ $0.1007 $300.0860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 138,420 pieces
MOQ: 385 pcs
Order Increment : 1 pcs
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