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BSS169L6327HTSA1

Part No BSS169L6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170MA SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Gate-Source Threshold Voltage 1.8V @ 50μA
Max Gate Charge 2.8nC @ 7V
Max Input Capacitance 68pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 170mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024508-BSS169L6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS169L6327HTSA1 CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity electronic component that is designed for use in discrete semiconductor products.

  • Mounting: SMD (SMT)
  • Packaging: Reel - TR
  • Power Dissipation: 360mW (Ta)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 170mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.8V @ 50μA
  • Maximum Gate Charge: 2.8nC @ 7V
  • Maximum Input Capacitance: 68pF @ 25V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance
  • Case/Package: PG-SOT23-3
  • Dimensions: TO-236-3, SC-59, SOT-23-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
475+ $0.1062 $50.4450
1,010+ $0.0995 $100.4950
1,565+ $0.0961 $150.3965
2,240+ $0.0894 $200.2560
2,910+ $0.0860 $250.2600
3,630+ $0.0827 $300.2010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 466,070 pieces
MOQ: 475 pcs
Order Increment : 1 pcs
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