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Same model may have multiple batches, images only for reference.
BSS169L6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSS169L6327HTSA1

Part No BSS169L6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170MA SOT-23
Datasheet
BSS169L6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Gate-Source Threshold Voltage 1.8V @ 50μA
Max Gate Charge 2.8nC @ 7V
Max Input Capacitance 68pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 6 Ohm @ 170mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024508-BSS169L6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS169L6327HTSA1 CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity electronic component that is designed for use in discrete semiconductor products.

  • Mounting: SMD (SMT)
  • Packaging: Reel - TR
  • Power Dissipation: 360mW (Ta)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 170mA (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.8V @ 50μA
  • Maximum Gate Charge: 2.8nC @ 7V
  • Maximum Input Capacitance: 68pF @ 25V
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance
  • Case/Package: PG-SOT23-3
  • Dimensions: TO-236-3, SC-59, SOT-23-3

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Quantity Unit Price Ext. Price
475+ $0.1062 $50.4450
1,010+ $0.0995 $100.4950
1,565+ $0.0961 $150.3965
2,240+ $0.0894 $200.2560
2,910+ $0.0860 $250.2600
3,630+ $0.0827 $300.2010
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