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BSS192PL6327

Part No BSS192PL6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 250V 0.19A 4-Pin(3+Tab) SOT-89 T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-89-4
Continuous Drain Current (ID) 190 mA
Current Rating -190 mA
Drain to Source Breakdown Voltage 250 V
Drain to Source Resistance 12 Ω
Drain to Source Voltage (Vdss) 250 V
Element Configuration Single
Fall Time 5.2 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 104 pF
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 1 W
Min Operating Temperature -55 °C
Mount Surface Mount
Nominal Vgs -1.5 V
Number of Elements 1
Number of Pins 3
Power Dissipation 1 W
Rds On Max 12 Ω
REACH SVHC No SVHC
Rise Time 5.2 ns
RoHS Compliant
Turn-Off Delay Time 72 ns
Turn-On Delay Time 4.7 ns
Voltage Rating (DC) -250 V
Win Source Part Number 1049731-BSS192PL6327
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BSS192PL6327 CAD Model

Description

The BSS192PL6327 is a single element MOSFET that is designed for use in transistors - FETs, MOSFETs - RF.

  • Maximum Voltage: 250 V
  • Current Rating: -190 mA
  • Input Capacitance: 104 pF
  • Power Dissipation: 1 W
  • Package: SOT-89-4
  • Rise Time: 5.2 ns
  • Fall Time: 5.2 ns
  • Turn-On Delay Time: 4.7 ns
  • Maximum Operating Temperature: 150 °C
  • RoHS Compliant: Yes

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