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Same model may have multiple batches, images only for reference.
BSS215PL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSS215PL6327HTSA1

Part No BSS215PL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.5A SOT-23
Datasheet
BSS215PL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 11μA
Max Gate Charge 3.6nC @ 4.5V
Max Input Capacitance 346pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024514-BSS215PL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS215PL6327HTSA1 CAD Model

Description

The Infineon Technologies 1024514-BSS215PL6327HTSA1 is a P-channel MOSFET that comes in a PG-SOT23-3 package.

  • Channel Type: P-Channel
  • Package: PG-SOT23-3
  • Drain-Source Breakdown Voltage (Max): 20V
  • Continuous Drain Current: 1.5A (Ta)
  • Rds On (Max) @ Id,Vgs: 150 mOhm @ 1.5A, 4.5V
  • Gate-Source Voltage (Max): ±12V
  • Frequency Transition: 2.5V, 4.5V
  • Category: Discrete Semiconductor Product
  • Operating Temperature: -55°C to 150°C (TJ)
  • Power Dissipation (Max): 500mW (Ta)

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