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BSS225 H6327

Part No BSS225 H6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSS225 H6327 Infineon Technologies MOSFETs N-Ch 600V 90mA SOT-89-3 datasheet, inventory, & pricing.
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-89-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 90 mA
Rds On - Drain-Source Resistance 28 Ohms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 1.9 V
Qg - Gate Charge 5.8 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W
Channel Mode Enhancement
Qualification AEC-Q101
Packaging Reel
Brand Infineon Technologies
Configuration Single
Fall Time 41 ns
Forward Transconductance - Min 50 mS
Product Type MOSFETs
Rise Time 38 ns
Series BSS225
Factory Pack Quantity Factory Pack Quantity 1000
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 62 ns
Typical Turn-On Delay Time 14 ns
Part # Aliases SP001047644 BSS225H6327FTSA1
Unit Weight 0.004603 oz
Ultra Librarian 3D Model Ultra Librarian BSS225 H6327 CAD Model

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